參數(shù)資料
型號(hào)： BUK7610-30
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 50V; Case Size: 30x35 mm; Packaging: Bulk
中文描述： 75 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 53K
代理商： BUK7610-30
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7610-30
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor
in
a
suitable for surface mounting using
’
trench
’ technology.
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
purpose
applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
30
75
142
175
10.5
V
A
W
C
m
The
device
V
GS
= 10 V
switching
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
20
75
53
240
142
175
UNIT
V
V
V
A
A
A
W
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.05
UNIT
K/W
R
th j-a
minimum footprint, FR4
board
50
-
K/W
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
1
3
mb
2
December 1997
1
Rev 1.100
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參數(shù)描述
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