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參數(shù)資料
| 型號(hào)： | BUK7510-100B |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管 |
| 封裝： | BUK7510-100B<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 417K |
| 代理商： | BUK7510-100B |
BUK7510-100B
N-channel TrenchMOS standard level FET
Rev. 03 — 14 April 2010
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
DS
drain-source
voltage
drain current
T
j
≥
25 °C; T
j
≤
175 °C
-
-
100
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
-
-
75
A
P
tot
total power
dissipation
-
-
300
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
;
see
Figure 12
-
8.6
10
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
≤
100 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
629
mJ
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 80 V; T
j
= 25 °C;
see
Figure 13
-
22
-
nC
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