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參數(shù)資料
| 型號： | BUK7105-40ATE |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchPLUS standard level FET |
| 中文描述： | 75 A, 40 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-5 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 215K |
| 代理商： | BUK7105-40ATE |
BUK7105-40ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
temperature sensing and ElectroStatic Discharge (ESD) protection. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
Static characteristics
R
DSon
Quick reference
Parameter
drain-source voltage
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
40
Unit
V
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7
; see
Figure 8
I
F
= 250 μA; T
j
≥
-55 °C;
T
j
≤
175 °C
-
4.5
5
m
S
F(TSD)
temperature sense
diode temperature
coefficient
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
temperature sense
diode forward
voltage
I
F
= 250 μA; T
j
= 25 °C
648
658
668
mV
V
F(TSD)hys
temperature sense
diode forward
voltage hysteresis
I
F
≤
250 μA; T
j
= 25 °C;
I
F
≥
125 μA
25
32
50
mV
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK7105-40ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7105-40ATE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7107-40ATC | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET |
| BUK7107-40ATC /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7107-40ATC,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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