參數(shù)資料
型號(hào)： BUK664R6-40C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 80 A, 40 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 1/14頁
文件大?。?/td> 356K
代理商： BUK664R6-40C
1.
Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
BUK664R6-40C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 17 November 2010
Product data sheet
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
40
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
-
-
100
A
P
tot
total power
dissipation
-
-
158
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
-
3.6
4.6
m
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK664R6-40C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK664R8-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V120ASOT404 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,120A,SOT404
BUK664R8-75C,118 功能描述:MOSFET N-CHANNEL TRENCHMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6C2R1-55C 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 228A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 55V, 228A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:228A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V ;RoHS Compliant: Yes
BUK6C2R1-55C,118 功能描述:MOSFET N-chan TrenchMOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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