參數(shù)資料
型號: BUK6507-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS logic and standard level FET
中文描述: 100 A, 55 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 1/14頁
文件大?。?/td> 185K
代理商: BUK6507-55C
1.
Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drives
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
BUK6507-55C
N-channel TrenchMOS logic and standard level FET
Rev. 01 — 12 October 2010
Product data sheet
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
Min
-
-
Typ
-
-
Max
55
100
Unit
V
A
P
tot
total power
dissipation
-
-
158
W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
-
5.8
7
m
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BUK6507-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V72ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,72A,SOT78
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BUK6510-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V54ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,54A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,54A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
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