參數(shù)資料
型號： BUK6213-30A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： N溝道 TrenchMOS 中間級場效應管
封裝： BUK6213-30A<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,;
文件頁數(shù)： 1/10頁
文件大小： 280K
代理商： BUK6213-30A
1.
Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for logic or standard level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
[1]
Continuous current is limited by bondwires.
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Rev. 03 — 2 February 2011
Product data sheet
DA
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
30
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
-
-
55
A
P
tot
total power
dissipation
-
-
102
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C; see
Figure 4
;
see
Figure 5
-
10
13
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 55 A; V
sup
≤
30 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
267
mJ
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 5 V; I
D
= 25 A;
V
DS
= 24 V
-
14
-
nC
相關PDF資料
PDF描述
BUK6213-30C N-channel TrenchMOS intermediate level FET
BUK6215-75C N-channel TrenchMOS FET
BUK6217-55C N-channel TrenchMOS intermediate level FET
BUK6218-40C N-channel TrenchMOS intermediate level FET
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相關代理商/技術參數(shù)
參數(shù)描述
BUK6213-30A,118 功能描述:MOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6213-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V33ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,33A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,33A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6213-30C,118 功能描述:MOSFET N-CHAN 30V 47A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6215-75C 制造商:NXP Semiconductors 功能描述:MOSFETN CH75V57ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,75V,57A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6215-75C,118 功能描述:MOSFET N-CHAN 75V 57A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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