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參數(shù)資料
| 型號(hào)： | BUK574-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 20 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | BUK574-60H |
Philips Semiconductors
Objective specification
PowerMOS transistor
Logic level FET
BUK574-60H
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in
a plastic full-pack envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
60
20
30
150
42
V
A
W
C
m
V
GS
= 5 V
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
±
V
GSM
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source
voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
t
p
≤
50
μ
s
MIN.
-
-
-
-
MAX.
60
60
15
20
UNIT
V
V
V
V
I
D
I
D
I
DM
P
tot
T
stg
T
j
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
20
13.5
80
30
150
150
A
A
A
W
C
C
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
With heatsink compound
TYP.
-
MAX.
4.17
UNIT
K/W
R
th j-a
55
-
K/W
d
g
s
1 2 3
case
July 1996
1
Rev 1.001
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK581-100A | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK581-100AT/R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 900MA I(D) | SOT-223 |
| BUK58160A | 制造商:PHILIPS 功能描述:New |
| BUK581-60A | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK581-60AT/R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 1.5A I(D) | SOT-223 |
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