參數(shù)資料
型號: BUK482-200A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 2 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 1/8頁
文件大?。?/td> 52K
代理商: BUK482-200A
Philips Semiconductors
Product specification
PowerMOS transistor
BUK482-200A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic envelope suitable for surface
mounting featuring high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermal
cycling
Intended for use in Switched Mode
PowerSupplies(SMPS)and general
purpose switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
200
2.0
8.3
0.9
V
A
W
performance.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
CONDITIONS
MIN.
-
-
-
-
-
-
MAX.
200
200
30
2.0
1.3
8.0
UNIT
V
V
V
A
A
A
R
GS
= 20 k
T
sp
= 25 C
T
sp
= 100 C
T
sp
= 25 C
I
DM
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
I
DR
T
sp
= 25 C
-
2.0
A
I
DRM
T
sp
= 25 C
-
8.0
A
P
tot
T
stg
T
j
T
sp
= 25 C
-
8.3
150
150
W
C
C
-55
-
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 2 A ; V
DD
50 V ; V
GS
= 10 V ;
R
GS
= 50
MIN.
MAX.
UNIT
T
= 25C prior to surge
T
j
= 100C prior to surge
-
-
50
8
mJ
mJ
4
1
2
3
d
g
s
January 1998
1
Rev 1.000
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