參數(shù)資料
型號(hào): BUK474-60H
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/8頁
文件大?。?/td> 55K
代理商: BUK474-60H
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 41 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 41 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
0
0.5
1
1.5
2
0
10
20
30
40
50
60
70
80
BUK474-60H
VSDS / V
IF / A
Tj / C =
-40
25
150
0.01
0.1
1
10
100
100
1000
10000
BUK474-60H
VDS / V
C / pF
Ciss
Coss
Crss
20
40
60
80
Ths / C
100
120
140
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
10
20
30
40
0
2
4
6
8
10
12
BUK474-60H
QG / nC
VGS / V
48
VDS / V = 12
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
February 1996
5
Rev 1.000
相關(guān)PDF資料
PDF描述
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參數(shù)描述
BUK475-100A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-100A/B
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BUK475-60A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60A/B