參數(shù)資料
型號(hào): BUK474-200B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔離版本的功率MOS場(chǎng)效應(yīng)管)
中文描述: 4.7 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: PLASTIC, FULL PACK-3
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 79K
代理商: BUK474-200B
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
April 1998
6
Rev 1.100
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