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參數(shù)資料
| 型號： | BUK464-200A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 60K |
| 代理商： | BUK464-200A |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK464-200A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 3.5 A
2.1
-
-
-
-
3.0
1
0.1
10
0.35
4.0
10
1.0
100
0.4
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 3.5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
3.5
-
-
-
-
-
-
-
-
TYP.
5.0
700
100
50
12
45
80
40
2.5
MAX.
-
850
160
80
20
70
120
60
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 2.9 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
9.2
UNIT
A
-
I
F
= 9.2 A ; V
GS
= 0 V
I
F
= 9.2 A; -dI
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 100 V
-
-
-
-
-
36
1.3
-
-
A
V
ns
μ
C
1.1
180
1.2
AVALANCHE LIMITING VALUE
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 9 A ; V
≤
100 V ;
V
GS
= 10 V ; R
GS
= 50
MIN.
-
TYP.
-
MAX.
50
UNIT
mJ
February 1996
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK464-60H | PowerMOS transistor |
| BUK465-100A | PowerMOS transistor |
| BUK465-200A | PowerMOS transistor |
| BUK465-60A | PowerMOS transistor |
| BUK465-60H | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK464-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK465-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK465-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK465-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK465-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
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