參數(shù)資料
型號(hào)： BUK453-60A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor
中文描述： 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大小： 54K
代理商： BUK453-60A
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK453-60A/B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
60
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 60 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
= 10 V; I
D
=
10 A
2.1
-
-
-
-
-
3.0
1
0.1
10
0.07
0.08
4.0
10
1.0
100
0.08
0.10
V
μ
A
mA
nA
BUK453-60A
BUK453-60B
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
4.5
-
-
-
-
-
-
-
-
TYP.
6.5
650
240
120
10
35
60
55
3.5
MAX.
-
825
350
160
20
55
90
80
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
22
UNIT
A
-
I
F
= 22 A ; V
GS
= 0 V
I
F
= 22 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
88
1.7
-
-
A
V
ns
μ
C
1.3
60
0.25
AVALANCHE LIMITING VALUE
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 22 A ; V
≤
25 V ;
V
GS
= 10 V ; R
GS
= 50
MIN.
-
TYP.
-
MAX.
50
UNIT
mJ
April 1993
2
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK453-60 PowerMOS transistor
BUK453-60B PowerMOS transistor
BUK455-400A N-Channel Enhancement MOSFET
BUK455-400B N-Channel Enhancement MOSFET
BUK455-450B N-Channel Enhancement MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK453-60B 制造商:NXP Semiconductors 功能描述:
BUK454-200A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK454-200B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK454-200B,127 制造商:NXP Semiconductors 功能描述:
BUK454-400A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
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