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參數(shù)資料
| 型號(hào)： | BUK446-1000B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 1.5 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUK446-1000B |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-1000B
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
D =
BUKx46-hv
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
4
8
12
16
20
24
28
BUK456-1000A
VDS / V
6
5
4
3
2
1
0
4
4.2
4.4
4.6
4.8
5
6
10
ID / A
VGS / V =
10
1000
VDS / V
10
1
0.1
0.01
BUK446-1000B
100
ID / A
DC
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDSON =VDSID
0
1
2
3
4
BUK456-1000A
ID / A
15
10
5
0
4.2
4.4
4.6
4.8
5
10
RDS(ON) / Ohm
VGS / V =
May 1995
3
Rev 1.200
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|---|---|
| BUK446-800A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK446-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK451-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK451-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK451-60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-220AB |
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