參數(shù)資料
型號(hào): BUK444-200
廠商: NXP Semiconductors N.V.
英文描述: PowerMOS transistor
中文描述: 功率金屬氧化物半導(dǎo)體晶體管
文件頁數(shù): 4/7頁
文件大?。?/td> 77K
代理商: BUK444-200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-200A/B
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 3.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
12
14
16
18
20
BUK444-200A
VDS / V
20
15
10
5
0
4
5
6
7
8
10
20
ID / A
VGS / V =
0
2
4
6
8
10
12
14
16
18
20
BUK454-200A
ID / A
gfs / S
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
BUK454-200A
ID / A
1.5
1.0
0.5
0
4.5 5
5.5
6
6.5
7
7.5
8
10
20
RDS(ON) / Ohm
VGS / V =
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
2
4
6
8
10
BUK454-200A
VGS / V
20
15
10
5
0
ID / A
Tj / C =
25
150
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
April 1993
4
Rev 1.100
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BUK444-200A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
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