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參數(shù)資料
| 型號： | BUK221-50DY |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual channel high-side TOPFET |
| 中文描述： | 4 A, 45 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-7 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 435K |
| 代理商： | BUK221-50DY |
Philips Semiconductors
BUK221-50DY
Dual channel high-side TOPFET
Product data
Rev. 01 — 16 April 2003
7 of 16
9397 750 11167
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1]
For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This
negative voltage is clamped by the device.
9 V
≤
V
BG
≤
35 V
This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
Defined as in ISO10483-1. For comparison purposes only.
This only applies to the R
BLon
per channel. The supply and input voltages for the R
BLon
tests are continuous. The specified pulse
duration is t
p
= 300
μ
s, and refers only to the applied load current.
R
G
is a resistor incorporated internally into the package.
5.5 V
≤
V
BG
≤
35 V
An open circuit load can be detected in the off-state and requires an external pull-up resistor, R
L(oc)
.
See
Table 3 “Truth table”
[10] Overtemperature protection is not active during reverse current operation.
[11] Undervoltage sensor causes each output channel to switch off and reset.
[12] Overvoltage sensor causes each output channel to switch off to protect the load.
[13] After cooling below the reset temperature the channel will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up resistor, R
S
, to indicate a logic HIGH.
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
I
L(oc)
load open circuit current
V
LG
= 3.5 V; per channel
V
LG
= 16 V; per channel
V
S
= 5 V; connected externally;
per channel;
Figure 10
-
-
-
22
200
10
40
300
-
μ
A
μ
A
k
R
L(oc)
open circuit load resistor
Undervoltage
[9]
V
BG(uv)
V
BG(uv)(hys)
battery-ground undervoltage
hysteresis
Overvoltage
[9]
V
BG(ov)
battery-ground overvoltage
V
BG(ov)(hys)
battery-ground overvoltage hysteresis
I
G(ov)
overvoltage operating current
Overload protection
I
L(lim)
self-limiting load current
Overtemperature protection
[9][10]
T
j(th)
threshold junction temperature
T
j(th)(hys)
threshold junction temperature
hysteresis
Status
[9]
V
SG(CL)
status-ground clamping voltage
V
SG(L)
status-ground low voltage
battery-ground undervoltage
[11]
2
-
4.2
0.5
5.3
1.5
V
V
[12]
35
0.2
-
40
1
1
45
2
2.5
V
V
mA
V
BG
= 45 V; per channel
V
BG
≥
8 V; V
BL
= V
BG;
Figure 7
8
12
16
A
[13]
150
3
170
10
190
20
°
C
°
C
I
S
= 100
μ
A
I
S
= 100
μ
A;
Figure 6
I
S
= 250
μ
A
V
SG
= 5 V
T
mb
= 150
°
C
T
mb
= 25
°
C
V
SG
= 5 V; connected externally;
Figure 10
5.5
-
-
7
0.7
-
8.5
0.9
1.1
V
V
V
I
S(off)
status leakage current
-
-
-
-
0.1
47
10
1
-
μ
A
μ
A
k
R
S
status resistor
[14]
Table 6:
Limits are valid for
40
°
C
≤
T
mb
≤
+150
°
C and typical values for T
mb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
…continued
Conditions
Min
Typ
Max
Unit
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| BUK221-50DY,118 | 功能描述:MOSFET N-CH 50V 4A SOT427 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 內部開關 系列:TOPFET™ 標準包裝:1,000 系列:- 類型:高端/低端驅動器 輸入類型:SPI 輸出數(shù):8 導通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應商設備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BUK223-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK223-50Y,127 | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK224-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch |
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