參數(shù)資料
型號: BUK207-50Y
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: TOPFET high side switch SMD version of BUK203-50Y
中文描述: 4 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, 5 PIN
文件頁數(shù): 6/13頁
文件大?。?/td> 123K
代理商: BUK207-50Y
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK203-50Y
BUK207-50Y
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250
μ
s
Fig.8. Typical on-state resistance, T
= 25 C.
R
ON
= f(V
BG
); conditions: I
L
= 2 A; t
p
= 300
μ
s
Fig.9. Typical on-state resistance, t
= 300
μ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 0.5 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
L
VBL
0
1
2
VBL / V
IL / A
BUK207-50Y
10
9
8
7
6
5
4
3
2
1
0
1.5
0.5
VBG / V =
13
5
6
7
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
VBG / V
RON / Ohm
BUK207-50Y
400
300
200
100
0
0
20
40
60
80
100
120
140
Tmb / C
IL / A
BUK207-50Y
8
7
6
5
4
3
2
1
0
-60
-20
20
60
Tj / C
100
140
180
RON / Ohm
BUK207-50Y
0.5
0.4
0.3
0.2
0.1
0
5 V
13 V
VBG =
typ.
July 1996
6
Rev 1.000
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