參數(shù)資料
型號: BUK207-50X
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: TOPFET high side switch SMD version of BUK203-50X
中文描述: 4 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, 5 PIN
文件頁數(shù): 10/13頁
文件大?。?/td> 122K
代理商: BUK207-50X
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK203-50X
BUK207-50X
Fig.28. Typical negative load clamping voltage.
V
LG
= f(T
j
); parameter I
L
; condition V
IG
= 0 V.
Fig.29. Typical battery to load clamping voltage.
V
BL
= f(T
j
); parameter I
L
; condition I
G
= 5 mA.
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 C
Fig.31. Typical reverse diode characteristic.
I
L
= f(V
BL
); conditions V
IG
= 0 V, T
j
= 25 C
Fig.32. Typical output capacitance. T
mb
= 25 C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.33. Typical overload characteristic, T
= 25 C.
I
L
= f(V
BL
); condition V
BG
= 13 V; parameter t
p
-60
-20
20
60
Tj / C
100
140
180
VLG / V
BUK207-50X
-22
-20
-18
-16
-14
-12
-10
2 A
1 mA
IL =
tp = 300 us
-1.1
-0.9
-0.7
-0.5
-0.3
-0.1
VBL / V
IL / A
BUK207-50X
0
-5
-10
-15
-20
-60
-20
20
60
Tj / C
100
140
180
VBL / V
BUK207-50X
65
60
55
50
100 uA
1 mA
1 A
IL =
tp = 300 us
0
20
40
VBL / V
Cbl / pF
BUK207-50X
1000
100
10
50
30
10
-1
-0.8
-0.6
-0.4
-0.2
0
VBG / V
IG / mA
BUK207-50X
0
-50
-100
-150
-200
0
4
8
12
16
20
24
28
VBL / V
IL / A
BUK207-50X
20
15
10
5
0
current limiting
i.e. before short
circuit load trip
50 us
VBL(TO) typ.
tp =
300 us
July 1996
10
Rev 1.000
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