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參數(shù)資料
| 型號： | BUK202-50Y |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關) |
| 中文描述： | 20 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263-01, SEP-5 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 121K |
| 代理商： | BUK202-50Y |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK202-50Y
DYNAMIC CHARACTERISTICS
T
mb
= 25 C; V
BG
= 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Inductive load turn-off
Negative load voltage
1
-V
LG
V
IG
= 0 V; I
L
= 10 A; t
p
= 300
μ
s
15
20
25
V
Short circuit load protection
2
Response time
Load current prior to turn-off
V
IG
= 5 V; R
L
≤
10 m
t
d sc
I
L
-
-
75
50
-
-
μ
s
A
t < t
d sc
Overload protection
3
Load current limiting
I
L(lim)
V
BL
= 9 V; t
p
= 300
μ
s
34
45
64
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C, V
BG
= 13 V, for resistive load R
L
= 13
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
During turn-on
Delay time
Rate of rise of load voltage
to V
IG
= 5 V
to 10% V
L
t
d on
dV/dt
on
-
-
16
0.7
-
2
μ
s
V/
μ
s
t
on
Total switching time
to 90% V
L
-
140
-
μ
s
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
to V
IG
= 0 V
to 90% V
L
t
d off
dV/dt
off
t
off
-
-
-
40
0.7
70
-
2
-
μ
s
V/
μ
s
μ
s
to 10% V
L
CAPACITANCES
T
mb
= 25 C; f = 1 MHz; V
IG
= 0 V
SYMBOL
PARAMETER
C
ig
Input capacitance
C
bl
Output capacitance
C
sg
Status capacitance
CONDITIONS
V
BG
= 13 V
V
BL
= V
BG
= 13 V
V
SG
= 5 V
MIN.
-
-
-
TYP.
15
500
11
MAX.
20
700
15
UNIT
pF
pF
pF
1
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2
The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3
If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V
BL(TO)
, the device remains in
current limiting until the overtemperature protection operates.
April 1995
5
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BUK203-50X | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關) |
| BUK203-50Y | CONNECTOR ACCESSORY |
| BUK204-50X | TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開關) |
| BUK204-50Y | TOPFET high side switch SMD version of BUK200-50X(BUK200-50X的SMD版本TOPFET高邊開關) |
| BUK205-50X_1 | TOPFET high side switch SMD version of BUK201-50X(BUK200-50X的SMD版本TOPFET高邊開關) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK202-50Y,127 | 功能描述:電源開關 IC - 配電 TOPFET HIGH SIDE SW RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK203-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK203-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET high side switch |
| BUK204-50X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch SMD version of BUK200-50X |
| BUK204-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch SMD version of BUK200-50Y |
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