參數(shù)資料
型號: BUK201-50X
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
中文描述: 15 A BUF OR INV BASED PRPHL DRVR, PSFM5
封裝: PLASTIC, TO-220, SOT-263-01, 5 PIN
文件頁數(shù): 6/13頁
文件大?。?/td> 123K
代理商: BUK201-50X
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK201-50X
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.6. Limiting continuous on-state load current.
I
L
= f(T
mb
); conditions: V
IG
= 5 V, V
BG
= 13 V
Fig.7. Typical on-state characteristics, T
j
= 25 C.
I
L
= f(V
BL
); parameter V
BG
; t
p
= 250
μ
s
Fig.8. Typical on-state resistance, T
= 25 C.
R
ON
= f(V
BG
); conditions: I
L
= 7.5 A; t
p
= 300
μ
s
Fig.9. Typical on-state resistance, t
= 300
μ
s.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 1.5 A
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
L
VBL
0
0.5
1
1.5
2
0
10
20
30
40
BUK201-50X
VBL / V
IL / A
6
7
13
5
VBG / V =
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
0
10
20
30
40
50
60
70
80
90
100
BUK201-50X
VBG / V
RON / mOhm
0
50
100
150
0
5
10
15
20
BUK201-50X
Tmb / C
IL / A
BUK201-50X
Tmb / C
-60
-20
20
60
100
140
180
RON / mOhm
0
50
100
150
VBG =
5 V
13 V
typ.
July 1996
6
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK201-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK202-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK202-50Y PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK203-50X PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK203-50Y CONNECTOR ACCESSORY
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BUK202-50Y,127 功能描述:電源開關(guān) IC - 配電 TOPFET HIGH SIDE SW RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5