參數(shù)資料
型號： BUK148-50DL
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR
中文描述： 晶體管| MOSFET的| N溝道| 50V五（巴西）直| 8A條（?。﹟對220VAR
文件頁數(shù)： 3/6頁
文件大?。?/td> 37K
代理商： BUK148-50DL
Philips Semiconductors
Product specification
Logic level TOPFET
BUK148-50DL
OUTPUT CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
V
DS
= 40 V
V
(CL)DSS
Drain-source clamping voltage
50
-
-
V
50
60
70
V
I
DSS
Drain source leakage current
-
-
-
100
10
μ
A
μ
A
T
mb
= 25 C
0.1
On-state
I
DM
= 3 A; t
p
≤
300
μ
s;
δ
≤
0.01
V
IS
≥
4.4 V
R
DS(ON)
Drain-source resistance
-
-
-
190
100
m
m
m
m
T
mb
= 25 C
68
V
IS
≥
4 V
-
-
-
200
105
T
mb
= 25 C
72
OVERLOAD CHARACTERISTICS
-40C
≤
T
mb
≤
150C unless otherwise specified.
SYMBOL
PARAMETER
Short circuit load
I
D
Drain current limiting
CONDITIONS
V
DS
= 13 V
V
= 5 V;
4.4 V
≤
V
IS
≤
5.5 V
4 V
≤
V
IS
≤
5.5 V
V
= 5 V;
device trips if P
D
> P
D(TO)
which determines trip time
1
MIN.
TYP.
MAX.
UNIT
T
mb
= 25C
8
6
5
12
-
-
16
18
18
A
A
A
Overload protection
Overload power threshold
Characteristic time
T
mb
= 25C
P
D(TO)
T
DSC
20
200
55
350
80
600
W
μ
s
Overtemperature protection
Threshold junction
temperature
2
T
j(TO)
150
170
-
C
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2
This is independent of the dV/dt of input voltage V
IS
.
May 2001
3
Rev 1.100
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