參數(shù)資料
型號(hào)： BUK130-50DL
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 外設(shè)及接口
英文描述： Logic level TOPFET SMD version of BUK119-50DL
中文描述： 43 A BUF OR INV BASED PRPHL DRVR, PSSO2
封裝： PLASTIC, SOT-404, D2PAK-3
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 42K
代理商： BUK130-50DL
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK119-50DL
BUK130-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
Continuous drain source voltage
1
Continuous drain current
-
-
50
self -
limited
20
5
50
90
175
150
V
A
V
IS
= 5 V; T
mb
=
25C
I
D
I
I
I
IRM
P
D
T
stg
T
j
T
sold
Continuous drain current
Continuous input current
Repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
2
V
IS
= 5 V; T
mb
≤
121C
-
A
-5
-50
-
-55
-
mA
mA
W
C
C
δ
≤
0.1, tp = 300
μ
s
T
mb
≤
25C
normal operation
Case temperature
during soldering
-
260
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
I
DM
= 20 A; V
DD
≤
20 V
T
mb
≤
25C
T
mb
≤
95C; f = 250 Hz
E
DSM
E
DRM
-
-
350
45
mJ
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DS
Drain source voltage
3
4 V
≤
V
IS
≤
5.5 V
0
35
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
Junction to mounting base
R
th j-mb
R
th j-a
-
-
1.25
1.39
K/W
Junction to ambient
minimum footprint FR4 PCB
-
50
-
K/W
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.900
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK130-50DL /T3 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK130-50DL,118 功能描述:MOSFET BUK130-50DL/SOT404/REEL13// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK135-50L 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level TOPFET
BUK135-50L /T3 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK135-50L,118 功能描述:MOSFET TAPE13 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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