參數(shù)資料
型號(hào)： BUK108-50GL
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET)
中文描述： 13.5 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 3/11頁(yè)
文件大?。?/td> 127K
代理商： BUK108-50GL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK108-50GL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
R
th j-a
Junction to mounting base
-
-
2.5
3.1
K/W
Junction to ambient
minimum footprint FR4 PCB
(see fig. 32)
-
50
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
50
-
-
V
Drain-source clamping voltage
-
-
70
V
I
DSS
I
DSS
I
DSS
R
DS(ON)
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 50 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 40 V; V
IS
= 0 V; T
j
= 125 C
Drain-source on-state
resistance
-
-
-
-
0.5
1
10
85
10
20
100
125
μ
A
μ
A
μ
A
m
V
IS
= 5 V; I
DM
= 7.5 A; t
p
≤
300
μ
s;
δ
≤
0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
Short circuit load protection
1
T
mb
= 25 C; L
≤
10
μ
H
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 5 V
t
d sc
Response time
V
DD
= 13 V; V
IS
= 5 V
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS
= 5 V; from I
D
≥
0.5 A
2
MIN.
TYP.
MAX.
UNIT
-
-
0.2
0.8
-
-
J
ms
150
-
-
C
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
Input threshold voltage
Input supply current
Protection reset voltage
3
V
DS
= 5 V; I
D
= 1 mA
V
IS
= 5 V; normal operation
1.0
-
2.0
1.5
0.2
2.6
2.0
0.35
3.5
V
mA
V
Protection reset voltage
T
j
= 150 C
V
IS
= 5 V; protection latched
I
I
= 10 mA
to gate of power MOSFET
1.0
-
-
Input supply current
Input clamp voltage
Input series resistance
0.5
6
-
1.2
-
4
2.0
-
-
mA
V
k
1
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
3
The input voltage below which the overload protection circuits will be reset.
June 1996
3
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK108-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
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BUK109-50GL PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET)
BUK109-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
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參數(shù)描述
BUK108-50GS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
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BUK109-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
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