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參數(shù)資料
| 型號(hào)： | BUH315DFH |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開(kāi)關(guān)NPN電源晶體管 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 216K |
| 代理商： | BUH315DFH |
Switching Time Resistive Load at 16 KHz
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes power losses, fall time t
f
and,
consequently, T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at 16 KHz scanning frequencies
the optimum negative drive. The test circuit is
illustrated in fig. 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2 L
(
I
C
)
2
=
1
1
√
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
2 C
(
V
CEfly
)
2
ω
=
2
π
f
=
BASE DRIVE INFORMATION
BUH315DFH
4/7
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