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參數(shù)資料
| 型號(hào)： | BUF7216 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 92K |
| 代理商： | BUF7216 |
BUF7216
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20–Jan–99
3 (8)
Document Number 86520
Switching Characteristics
T
case
= 25
°
C, unless otherwise specified
Parameter
Resistive load (figure 2)
Fall time
Test Conditions
Symbol
Min
Typ
Max
Unit
I
C
= 0.4 A; I
B1
= 50 mA;
–I
B2
= 0.4 mA; V
S
= 250 V
I
= 0.35 A; I
= 85 mA;
C
B1
–I
B2
= 175 mA; V
S
= 250 V
t
f
0.65
0.95
s
Turn on time
Storage time
Fall time
Turn on time
Storage time
Fall time
Inductive load (figure 3)
Storage time
t
on
t
s
t
f
t
on
t
s
t
f
0.25
3.5
0.25
0.4
3
0.2
0.5
4.5
0.35
0.7
4
0.3
s
s
s
s
s
s
I
= 1 A; I
= 0.2 A;
C
B1
–I
B2
= 0.5 A; V
S
= 250 V
I
C
= 0.35 A; I
B1
= 85 mA;
–I
B2
= 175 mA; V
clamp
= 300 V;
L = 200 H; –V
BE
= 5 V
I
C
= 1 A; I
B1
= 0.2 A;
0 5 A; V
–I
B2
= 0.5 A; V
clamp
= 300 V;
L = 200 H; –V
BE
= 5 V
t
s
t
f
t
s
t
f
3.2
4.5
s
Fall time
0.2
0.25
s
Storage time
3
3.5
s
Fall time
0.1
0.15
s
+
3 Pulses
94 8863
t
p
T
t
p
0.1
10 ms
V
S2
10 V
I
B
I
C
5
I
C
L
C
V
S1
0 to 30 V
V
(BR)CEO
I
(BR)R
100 m
I
C
V
CE
V
(BR)CEO
I
measure
Figure 1. Test circuit for V
(BR)CE0
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