參數(shù)資料
型號： BUF600AU
英文描述： HIGH-SPEED BUFFER AMPLIFIER
中文描述： 高速緩沖放大器
文件頁數(shù)： 3/14頁
文件大?。?/td> 247K
代理商： BUF600AU
3
BUF600, 601
BUF600AP, AU
BUF601AU
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
HARMONIC DISTORTION
Second Harmonic
Third Harmonic
Second Harmonic
Third Harmonic
Second Harmonic
Third Harmonic
f = 10MHz, V
O
= 1.4Vp-p
–65
–64
–51
–56
–43
–48
–65
–67
–59
–62
–53
–54
dBc
dBc
dBc
dBc
dBc
dBc
f = 30MHz, V
O
= 1.4Vp-p
f = 50MHz, V
O
= 1.4Vp-p
GAIN FLATNESS PEAKING
V
= 0.4Vp-p, DC to 30MHz
V
O
= 0.4Vp-p, 30MHz to 300MHz
0.01
0.3
0.005
0.1
dB
dB
LINEAR PHASE DEVIATION
V
O
= 0.4Vp-p, DC to 30MHz
V
O
= 0.4Vp-p, 30 to 300MHz
5.5
55
3.8
45
Degrees
Degrees
TIME DOMAIN
RISE TIME
10% to 90%, 700ps
1.4Vp-p Step
2.8Vp-p Step
5.0Vp-p Step
0.82
0.97
1.18
0.87
0.95
1.13
ns
ns
ns
SLEW RATE
V
O
= 1.4Vp-p
V
O
= 2.8Vp-p
V
O
= 5.0Vp-p
1500
2400
3400
1500
2400
3600
V/
μ
s
V/
μ
s
V/
μ
s
AC-SPECIFICATIONS (CONT)
At V
CC
=
±
5V, R
LOAD
= 200
(BUF600) and 100
(BUF601), R
SOURCE
= 50
, and T
AMB
= +25
°
C, unless otherwise noted.
PIN CONFIGURATION
Top View
DIP/SO-8
FUNCTION
DESCRIPTION
In
Out
+V
CC
–V
CC
Analog Input
Analog Output
Positive Supply Voltage; typical +5VDC
Negative Supply Voltage; typical –5VDC
FUNCTIONAL DESCRIPTION
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
Power Supply Voltage..........................................................................
±
6V
Input Voltage
(1)
.........................................................................
±
V
±
0.7V
Operating Temperature..................................................... –40
°
C to +85
°
C
Storage Temperature ...................................................... –40
°
C to +125
°
C
Junction Temperature .................................................................... +150
°
C
Lead Temperature (soldering, 10s)................................................ +300
°
C
NOTE: (1) Inputs are internally diode-clamped to
±
V
CC.
ABSOLUTE MAXIMUM RATINGS
PACKAGE
DRAWING
NUMBER
(1)
TEMPERATURE
RANGE
PRODUCT
PACKAGE
BUF600AP
BUF600AU
BUF601AU
Plastic 8-Pin DIP
SO-8 Surface Mount
SO-8 Surface Mount
006
182
182
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
1
2
3
4
8
7
6
5
+V
CC
NC
NC
In
Out
NC
NC
–V
CC
BUF600, BUF601
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
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參數(shù)描述
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