參數(shù)資料
型號: BUF508A
英文描述: BJT
中文描述: 雙極型晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 70K
代理商: BUF508A
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
BUF508A
TO-220FP Fully Isolated
Plastic Package
Applications
High voltage, high - speed switching transistor in TO - 220FP package envelope intended
for use in horizontal deflection of colour television circuits.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
Collector Emitter Voltage Peak Value; VBE=O
Collector Emitter Voltage
Collector Current (DC)
Collector Current (Peak)
Base Current (DC)
Base Current (Peak)
Reverse Base Current
(DC or average over any 20ms period)
SYMBOL
VCESM
V
CEO
I
C
I
CM
I
B
I
BM
- IB(AV)
VALUE
UNIT
V
V
A
A
A
A
mA
1500
700
8.0
15
4.0
6.0
100
Reverse Base Current *(Peak Value)
Power Dissipation upto Tmb=25oC
Operating & Storage Junction
Temperature Range
*Turn off current
I
BM
Ptot
T
j, Tstg
5.0
60
-65 to +150
A
W
oC
ELECTRICAL CHARACTERISTICS (Tc=25oC unless specified otherwise)
DESCRIPTION
Collector Cut off Current **
SYMBOL TEST CONDITION
I
CES
VCE=VCESM max, VBE=0
MIN
-
MAX
1.0
UNIT
mA
Tj=125oC
VCE=VCESM max, VBE=0
V
EB
=6V,I
C
=0
V
CEO (sus)
I
C
=100mA, I
B
=0, L=25mH
V
CE (Sat)
I
C
=4.5A, I
B
=2A
VBE(Sat)
I
C
=4.5A, I
B
=2A
-
-
2.0
10
-
1.0
1.3
mA
mA
V
V
V
Emitter Cut off Current
Collector Emitter (sus) Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
I
EBO
700
-
-
DYNAMIC CHARACTERISTISC
Transition Frequency
Collector Capacitance
**Measured with half - sinewave voltage (curve tracer)
ft
IC=0.1A, VCE=5V, f=5MHz
IE=ie=0, VCB=10V, f=1MHz TYP 125
TYP 7.0
MHz
pF
Cc
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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相關代理商/技術參數(shù)
參數(shù)描述
BUF508F 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN POWER TRANSISTORS
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