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參數(shù)資料
| 型號： | BUF405AFI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistors(高壓快速開關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開關(guān)晶體管（高壓快速開關(guān)npn型功率晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUF405AFI |
THERMAL DATA
TO-220
ISOWATT220
o
C/W
o
C/W
R
thj-case
Thermal Resistance Junction-Case
Max
1.56
3.12
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
Collector Cut-off
Current (I
B
= 0)
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
BE
= -1.5 V
V
CE
= V
CEV
V
BE
= -1.5 V T
c
=100
o
C
T
c
= 100
o
C
0.1
0.5
mA
mA
I
CEV
0.1
0.5
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE
= 5 V
1
mA
I
C
= 200 mA
L = 25 mH
450
V
I
E
= 50 mA
7
V
I
C
= 2.5 A
I
C
= 2.5 A
I
C
= 5 A
I
C
= 5 A
I
C
= 2.5 A
I
C
= 2.5 A
I
C
= 5 A
I
C
= 5 A
I
B
= 0.25 A
I
B
= 0.25 A
I
B
= 1 A
I
B
= 1 A
I
B
= 0.25 A
I
B
= 0.25 A
I
B
= 1 A
I
B
= 1 A
T
c
=100
o
C
T
c
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
T
c
=100
o
C
T
c
=100
o
C
t
p
= 3
μ
s
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-state
Collector Current
V
CC
= 300 V
I
B1
= 0.375 A
I
B1
= 0.375 A
I
B1
= 1.5 A
R
C
= 0
T
j
=25
o
C
T
j
=100
o
C
T
j
=100
o
C
30
60
40
A
/μ
s
A
/μ
s
A
/μ
s
V
CE
(3
μ
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V
I
B1
= 0.375 A
R
C
= 120
T
j
=25
o
C
T
j
=100
o
C
2.1
8
V
V
V
CE
(5
μ
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V
I
B1
= 0.375 A
R
C
= 120
T
j
=25
o
C
T
j
=100
o
C
1.1
4
V
V
μ
s
μ
s
μ
s
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
I
C
= 2.5 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 1 mH
I
C
= 2.5 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 1 mH
I
C
= 2.5 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 1 mH
I
C
= 2.5 A
V
BB
= 0
V
clamp
= 400 V
L = 1 mH
V
CC
= 50 V
R
BB
= 2.4
I
B1
= 0.25 A
0.8
0.05
0.08
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
V
CC
= 50 V
R
BB
= 2.4
I
B1
= 0.25 A
T
j
=100
C
V
CC
= 50 V
R
BB
= 2.4
I
B1
= 0.25 A
T
j
=125
C
V
CC
= 50 V
R
BB
= 0.6
I
B1
= 0.25 A
1.8
0.1
0.18
μ
s
μ
s
μ
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
500
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
1.5
0.04
0.07
μ
s
μ
s
μ
s
BUF405A / BUF405AFI
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