參數(shù)資料
型號： BUD42D-1
英文描述： TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA
中文描述： 晶體管|晶體管|叩| 350V五（巴西）總裁| 4A條一（c）|至251AA
文件頁數(shù)： 1/12頁
文件大?。?/td> 197K
代理商： BUD42D-1
Publication Order Number:
BUD42D/D
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 1
1
BUD42D
High Speed, High Gain
Bipolar NPN Transistor
Integrating an
Antisaturation Network and
a Transient Voltage
Suppression Capability
The BUD42D is a state–of–the–art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
Free Wheeling Diode Built In
Flat DC Current Gain
Fast Switching Times and Tight Distribution
“6 Sigma” Process Providing Tight and Reproducible Parameter
Spreads
Two Versions:
BUD42D–1: Case 369–07 for Insertion Mode
BUD42D: Case 369A–13 for Surface Mount Mode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
350
Vdc
Collector–Base Breakdown Voltage
V
CBO
650
Vdc
Collector–Emitter Breakdown Voltage
V
CES
650
Vdc
Emitter–Base Voltage
V
EBO
9
Vdc
Collector Current– Continuous
– Peak (Note 1)
I
C
I
CM
4.0
8.0
Adc
Base Current – Continuous
– Peak (Note 1)
I
B
I
BM
1.0
2.0
Adc
*Total Device Dissipation @ T
C
= 25 C
*Derate above 25 C
P
D
25
0.2
Watt
W/ C
Operating and Storage Temperature
T
J
, T
stg
–65 to +150
C
TYPICAL GAIN
Typical Gain @ I
C
= 1 A, V
CE
= 2 V
Typical Gain @ I
C
= 0.3 A, V
CE
= 1 V
h
FE
h
FE
13
16
–
–
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance –
Junction–to–Case
R
θ
JC
5.0
°
C/W
Thermal Resistance –
Junction–to–Ambient
R
θ
JA
71.4
°
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″
from Case for 5 seconds
T
L
260
°
C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
http://onsemi.com
DPAK
CASE 369
STYLE 1
4 AMPERES
650 VOLTS
25 WATTS
POWER TRANSISTOR
DPAK
CASE 369A
STYLE 1
MARKING DIAGRAMS
Y
WW
BUD43D2 = Device Code
= Year
= Work Week
YWW
BUD
43D2
YWW
BUD
43D2
Device
Package
Shipping
ORDERING INFORMATION
BUD42D
DPAK
75 Units/Rail
BUD42D–1
DPAK
75 Units/Rail
相關(guān)PDF資料
PDF描述
BUD43B1 TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 2A I(C) | TO-251
BUD43BK TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 2A I(C) | TO-251AA
BUD43BW TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 2A I(C) | TO-252AA
BUD43D2-1 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-251AA
BUD44D2-1 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUD42D-1G 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUD42DG 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUD42DT4 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUD42DT4G 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUD43B 制造商:Rochester Electronics LLC 功能描述:- Bulk
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