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參數(shù)資料
| 型號： | BU506DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| 中文描述： | 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BU506DF |
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V
BE
= 0
open base
V
CE
= 5 V
see Figs 2 and 3
see Figs 2 and 3
65
1500
700
3
5
8
3
5
20
+150
150
V
V
A
A
A
A
A
W
°
C
°
C
T
h
≤
25
°
C; see Fig.4
ISOLATION CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
12
1500
V
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
diode forward voltage (BU506DF) I
F
= 3 A
collector-emitter cut-off current
I
C
= 100 mA; I
B
= 0; L = 25 mH;
see Figs 5 and 6
I
C
= 3 A; I
B
= 1.33 A;
see Figs 7 and 8
I
C
= 3 A; I
B
= 1.33 A; see Fig.9
700
V
V
CEsat
1
V
V
BEsat
V
F
I
CES
1.5
1.3
2.2
0.5
1
V
V
mA
mA
V
CE
= V
CESmax
; V
BE
= 0
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°
C
V
EB
= 6 V; I
C
= 0
V
CE
= 5 V; I
C
= 3 A; see Fig.10
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
I
EBO
h
FE
emitter-base cut-off current
DC current gain
2.25
6
13
10
30
mA
Switching times in horizontal deflection circuit
(see Fig.11)
t
s
storage time
I
Csat
= 3 A; L
B
= 12
μ
H;
I
B(end)
= 1 A; dI
B
/dt =
0.33 A/
μ
s
I
Csat
= 3 A; L
B
= 12
μ
H;
I
B(end)
= 1 A; dI
B
/dt =
0.33 A/
μ
s
6.5
μ
s
t
f
fall time
0.7
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU506 | Silicon diffused power transistors |
| BU506D | Silicon diffused power transistors |
| BU5071 | |
| BU508AD | TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218AC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU506F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU-507 | 制造商:Thomas & Betts 功能描述: |
| BU-5070-B-12-0 | 功能描述:測試引線 Black BNC Male to St RoHS:否 制造商:Pomona Electronics 設(shè)備類型:Patch Cords 連接器類型:Banana plug (stackable) on both ends 長度:60 in 顏色:Black |
| BU-5070-B-24-0 | 功能描述:測試引線 Black BNC Male to St RoHS:否 制造商:Pomona Electronics 設(shè)備類型:Patch Cords 連接器類型:Banana plug (stackable) on both ends 長度:60 in 顏色:Black |
| BU-5070-B-36-0 | 功能描述:測試引線 Black BNC Male to St RoHS:否 制造商:Pomona Electronics 設(shè)備類型:Patch Cords 連接器類型:Banana plug (stackable) on both ends 長度:60 in 顏色:Black |
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