參數(shù)資料
型號(hào): BU506D
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 77K
代理商: BU506D
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
DESCRIPTION
High-voltage, high-speed, switching
NPN power transistor in a TO-220AB
package. The BU506D has an
integrated efficiency diode.
APPLICATIONS
Horizontal deflection circuits of
colour television receivers
Line-operated switch-mode
applications.
PINNING
PIN
DESCRIPTION
1
2
base
collector; connected to
mounting base
emitter
3
Fig.1 Simplified outline (TO-220AB) and symbols.
a. BU506.
b. BU506D.
MBK106
1 2 3
3
2
1
MBB008
3
2
1
MBB077
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CEO
V
CEsat
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation
voltage
diode forward voltage (BU506D)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
open base
I
C
= 3 A; I
B
= 1.33 A; see Fig.6
1500
700
1
V
V
V
V
F
I
Csat
I
C
I
CM
P
tot
t
f
I
F
= 3 A; see Fig.10
1.5
0.7
3
5
8
100
V
A
A
A
W
μ
s
see Fig.2
see Fig.2
T
mb
25
°
C; see Fig.3
inductive load; see Fig.9
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
1.25
K/W
相關(guān)PDF資料
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