參數(shù)資料
型號: BU505
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 3/12頁
文件大?。?/td> 74K
代理商: BU505
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V
BE
= 0
open base
65
1500
700
2
2.5
4
2
4
75
+150
150
V
V
A
A
A
A
A
W
°
C
°
C
see Fig.3
see Fig.3
T
mb
25
°
C; see Fig.4
Fig.2 Transient thermal impedance.
handbook, full pagewidth
MGB859
10
1
10
2
10
2
10
1
1
10
tp (ms)
10
2
1
Zth j
mb
(K/W)
δ
= 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
相關(guān)PDF資料
PDF描述
BU505D Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506F Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506DF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506 Silicon diffused power transistors
BU506D Silicon diffused power transistors
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