參數(shù)資料
型號: BU4515AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 9 A, 800 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 4/7頁
文件大?。?/td> 41K
代理商: BU4515AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4515AF
Fig.7. High and low DC current gain.
Fig.8. Typical collector-emitter saturation voltage.
Fig.9. Typical base-emitter saturation voltage.
Fig.10. Typical collector storage and fall time.
I
C
=6 A; T
j
= 85C; f = 16kHz
Fig.11. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
Fig.12. Transient thermal impedance.
0.01
0.1
1
10
1
10
100
Ths = 85C
Ths = 85C
5V
hFE
IC / A
0.5
1
1.5
2
2.5
0
2
4
6
8
10
IB / A
ts/tf/us
ICsat = 6A
Ths 85 C
Freq = 16kHz
0.1
1
10
0.01
0.1
1
10
IC / A
VCEsat / V
Ths = 85C
Ths = 25C
IC/IB = 5
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
IB/A
VBEsat/V
Ths = 25C
Ths = 85C
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
pulse width, tp (s)
1E-02
1E-01
1E+00
1E+01
Zth / (K/W)
D = 0.5
0.2
0.1
0.05
0.02
Single pulse
tp
D = tp/T
T
P
t
D
June 1999
4
Rev 1.000
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