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參數(shù)資料
| 型號： | BU4508DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BU4508DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
B
= 600 mA
V
= 6 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
BV
EBO
R
be
V
CEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
7.5
-
800
13.5
25
-
-
-
-
V
V
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltages I
C
= 5.0 A; I
B
= 1.25 A
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.03
-
7.3
2.2
V
V
I
C
= 5.0 A; I
= 1.25 A
I
C
= 500 mA; V
= 5 V
I
C
= 5.0 A; V
CE
= 5 V
I
F
= 5 A
0.85
-
4.2
-
0.94
7
5.7
1.85
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
CONDITIONS
I
Csat
= 5.0 A; I
B1
= 1.0 A;(I
B2
= -2.5 A)
TYP.
MAX.
UNIT
2.75
3.75
μ
s
t
f
V
fr
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
300
19
400
-
ns
V
I
F
= 4 A; dI
F
/dt = 50 A/
μ
s
t
fr
V
F
= 5 V
500
-
ns
2
Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4508DX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508DZ | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508HG | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU4508AF | Silicon Diffused Power Transistor |
| BU4515AF | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4508DX | 制造商:NXP Semiconductors 功能描述:800V 8A 45W Philips Transistor SOT-399 NPN |
| BU4508DZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4515DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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