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參數(shù)資料
| 型號： | BU406D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Silicon NPN Switching Transistors(硅NPN開關(guān)晶體管) |
| 中文描述： | 硅NPN開關(guān)晶體管（硅npn型開關(guān)晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BU406D |
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license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU407D | Silicon NPN Switching Transistors(硅NPN開關(guān)晶體管) |
| BU407FI | Silicon NPN Transistor(硅NPN晶體管) |
| BU505 | High Voltage NPN Multiepitaxial Fast-Switching Transistor(高壓快速開關(guān)NPN晶體管) |
| BU806FI | Medium Voltage NPN Fast Switching Darlington Transistor(NPN快速開關(guān)達林頓晶體管) |
| BU806 | Medium Voltage NPN Fast Switching Darlington Transistor(NPN快速開關(guān)達林頓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU406F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BU406FI | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BU406G | 功能描述:兩極晶體管 - BJT 7A 200V 60W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU406H | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU406HTU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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