參數(shù)資料
型號(hào): BU2522
廠商: NXP Semiconductors N.V.
英文描述: Silicon Diffused Power Transistor
中文描述: 擴(kuò)散硅功率晶體管
文件頁數(shù): 2/7頁
文件大?。?/td> 55K
代理商: BU2522
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.76 A
I
C
= 6.0 A; I
B
= 1.76 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 6 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.25
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
0.25
-
-
mA
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
8
5
-
-
5.0
1.3
21
8
V
V
10
7
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
CM
= 6.0 A; L
= 170
μ
H; C
= 5.4 nF;
I
= 0.7 A; L
= 0.6
μ
H; -V
BB
= 2 V;
(-dI
B
/dt = 3.33 A /
μ
s)
TYP.
115
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
1.7
0.12
2.0
0.25
μ
s
μ
s
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2
Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.100
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