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參數(shù)資料
| 型號(hào)： | BU2508DF |
| 廠商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | NPN TRIPLE DIFFUSE PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
| 中文描述： | npn型三重漫平面硅晶體管（彩電產(chǎn)量的橫向應(yīng)用） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | BU2508DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
45
1.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
C
= 4.5 A; I
B
= 1.12 A
I
F
= 4.5 A
I
Csat
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
1
2
3
case
b
c
e
Rbe
1
Turn-off current.
July 1998
1
Rev 1.600
相關(guān)PDF資料 |
PDF描述 |
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| BU4507AZ | Silicon Diffused Power Transistor |
| BU4507DX | Silicon Diffused Power Transistor |
| BU4507DZ | Silicon Diffused Power Transistor |
| BU4508AX | Silicon Diffused Power Transistor |
| BU508D | HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2508DF PHILIPS | 制造商:Distributed By MCM 功能描述:Bu2508Df 1.5Kv 8A 45W Bce Philips Transistor SOT-199 NPN |
| BU2508DF | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-199 |
| BU2508DF/B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR HIGH VOLT SOT-199 |
| BU2508DW | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2508DX | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SOT-93 NPN 1500V 8A 45W BCE |
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