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參數(shù)資料
| 型號(hào)： | BU2506 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 擴(kuò)散硅功率晶體管 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 66K |
| 代理商： | BU2506 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
3.0
1.6
0.25
MAX.
1500
700
5
8
45
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
C
= 3.0 A; I
B
= 0.79 A
I
F
= 3.0 A
I
Csat
= 3.0 A; I
B(end)
= 0.67 A
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
5
8
3
5
100
4
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
1
2
3
case
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.400
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| BU2506DX | Silicon Diffused Power Transistor |
| BU2507AX | Silicon Diffused Power Transistor |
| BU2507DF | Silicon Diffused Power Transistor |
| BU2507DX | Silicon Diffused Power Transistor |
| BU2507 | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU25065S-E3/45 | 功能描述:橋式整流器 25 Amp 600 Volt RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長(zhǎng)度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| BU25065S-M3/45 | 制造商:Vishay Semiconductors 功能描述:25A,600V,STD,INLINE POWER BRIDGE |
| BU2506AF | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BU2506AX | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BU2506DF | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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