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          • 您現(xiàn)在的位置:買賣IC網(wǎng) > PDF目錄256089 > BU-61586G2-190Z (DATA DEVICE CORP) 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CDSO70 PDF資料下載
          參數(shù)資料
          型號(hào): BU-61586G2-190Z
          廠商: DATA DEVICE CORP
          元件分類: 微控制器/微處理器
          英文描述: 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CDSO70
          封裝: LOW PROFILE, CERAMIC PACKAGE-70
          文件頁數(shù): 25/44頁
          文件大?。?/td> 298K
          代理商: BU-61586G2-190Z
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          31
          ns
          0
          STRBD valid high hold time from READYD rising edge
          t18
          note 6
          ns
          30
          STRBD rising edge delay to IOEN rising edge and READYD rising edge
          t17
          ns
          ∞
          READYD falling to STRBD rising edge release time
          t16
          note 6
          ns
          35
          CLOCK IN rising edge delay to READYD falling
          t15
          note 2
          ns
          0
          SELECT hold time following IOEN falling
          t7
          ns
          50
          Address valid setup time following SELECT and STRBD low (@ 12 MHz)
          t4
          notes 2, 6
          ns
          128.3
          SELECT and STRBD low delay to IOEN low (uncontended access @ 12 MHz)
          t2
          notes 7, 8, 9
          ns
          30
          Address valid setup time prior to CLOCK IN rising edge
          t10
          ns
          10
          Input Data valid setup time prior to CLOCK IN rising edge
          t11
          notes 9, 10
          ns
          30
          Input Data valid hold time following CLOCK IN rising edge
          t13
          notes 7, 8, 9, 10
          ns
          30
          Address valid hold time following to CLOCK IN rising edge
          t12
          notes 3, 4, 5, 7
          ns
          30
          MEM/REG, RD/WR hold time prior to CLOCK IN falling edge
          t9
          notes 6, 10
          ns
          265
          205
          250
          187.5
          235
          170
          IOEN falling delay to READYD falling (@ 16 MHz)
          t14
          notes 3, 4, 5, 7
          ns
          10
          MEM/REG, RD/WR setup time prior to CLOCK IN falling edge
          t8
          note 6
          ns
          35
          70
          50
          CLOCK IN rising edge delay to IOEN falling edge
          Input Data valid setup time following SELECT and STRBD low (@ 12 MHz)
          Input Data valid setup time following SELECT and STRBD low (@ 16 MHz)
          t6
          t5
          ns
          30
          Address valid setup time following SELECT and STRBD low (@ 16 MHz)
          t4
          notes 3, 4, 5, 7
          ns
          20
          MEM/REG, RD/WR setup time following SELECT and STRBD low(@ 12 MHz)
          t3
          notes 3, 4, 5, 7
          ns
          10
          MEM/REG, RD/WR setup time following SELECT and STRBD low(@ 16 MHz)
          t3
          notes 2, 6
          s
          2.8
          SELECT and STRBD low delay to IOEN low (contended access @ 16 MHz)
          t2
          notes 2, 6
          ns
          107.5
          SELECT and STRBD low delay to IOEN low (uncontended access @ 16 MHz)
          t2
          notes 2, 10
          ns
          10
          SELECT and STRBD low setup time prior to CLOCK IN rising edge
          t1
          NOTE REFERENCE
          UNITS
          MAX
          TYP
          MIN
          DESCRIPTION
          REF
          s
          3.7
          SELECT and STRBD low delay to IOEN low (contended access @ 12 MHz)
          t2
          TABLE FOR FIGURE 16. CPU WRITING RAM OR REGISTERS (SHOWN FOR 16-BIT, BUFFERED, NONZERO WAIT MODE)
          6. The timing for IOEN, READYD and D15-D0 assumes a 50 pf
          load. For loading above 50 pf, the validity of IOEN, READYD, and
          D15-D0 is delayed by an additional 0.14 ns/pf typ, 0.28 ns/pf max.
          7. Timing for A15-A0, MEM/REG and SELECT assumes ADDR-LAT
          is connected to logic "1." Refer to Address Latch timing for addition-
          al details.
          8. Internal RAM is accessed by A11 through A0 (A13 through A0 for
          61585 and 61586). Registers are accessed by A4 through A0.
          9. The address bus A15-A0 is internally buffered transparently until
          the first rising edge of CLK after IOEN goes low. After this CLK
          edge, A15-A0 become latched internally.
          10. Setup time given for use in worst case timing calculations.
          None of the ACE input signals are required to be synchronized to
          the system clock. For ACE applications only, where SELECT and
          STRBD do not meet the setup time of t1, but occur during the setup
          window of an internal flip-flop, an additional clock cycle will be
          inserted between the falling clock edge that latches MEM/REG and
          RD/WR and the rising clock edge that latches the Address (A15-A0)
          and data (D15-D0). When this occurs, the pulse width of IOEN
          falling to READYD falling (t14) increases by one clock cycle and the
          address hold time (t12 + t13) must be increased be one clock cycle.
          Notes for FIGURE 16 and associated table.
          1. For the 16-bit buffered nonzero wait configuration, TRANSPA-
          RENT/BUFFERED must be connected to logic "0". ZERO_WAIT
          and DTREQ/16/8 must be connected to logic "1". The inputs TRIG-
          GER_SEL and MSB/LSB may be connected to either +5 V or
          ground.
          2. SELECT and STRBD may be tied together. IOEN goes low on
          the first rising CLK edge when SELECT
          STRBD is sampled low
          (satisfying t1) and the BU-65170/61580's protocol/memory manage-
          ment logic is not accessing the internal RAM. When this occurs,
          IOEN goes low, starting the transfer cycle. After IOEN goes low,
          SELECT may be released high.
          3. MEM/REG must be presented high for memory access, low for
          register access.
          4. MEM/REG and RD/WR are buffered transparently until the first
          falling edge of CLK after IOEN goes low. After this CLK edge,
          MEM/REG and RD/WR become latched internally.
          5. The logic sense for RD/WR in the diagram assumes that POLAR-
          ITY_SEL is connected to logic "1." If POLARITY_SEL is connected
          to logic "0," RD/WR must be asserted high to write.
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