參數(shù)資料
型號(hào): BTW69N1200
廠商: 意法半導(dǎo)體
英文描述: SCR
中文描述: 可控硅
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 234K
代理商: BTW69N1200
BTW67 and BTW69 Series
3/5
Fig. 1:
Maximum average power dissipation
versus average on-state current.
Fig. 2:
Average and D.C. on-state current versus
case temperature.
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5:
number of cycles.
Surge peak on-state current versus
Fig.
current
tp < 10ms, and corresponding value of I2t.
6:
Non-repetitive
for
a
surge
peak
on-state
with
sinusoidal
pulse
width
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