參數(shù)資料
型號: BTW66
廠商: 意法半導(dǎo)體
英文描述: SCR(硅控整流器)
中文描述: 可控硅(硅控整流器)
文件頁數(shù): 1/6頁
文件大?。?/td> 83K
代理商: BTW66
BTW 66
BTW 67
March 1995
SCR
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
°
conduction angle)
BTW 66
BTW 67
Tc=75
°
C
Tc=75
°
C
30
40
A
IT(AV)
Average on-state current (180
°
conduction
angle,single phase circuit)
BTW 66
BTW 67
Tc=75
°
C
Tc=75
°
C
20
25
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
BTW 66
BTW 67
tp=8.3 ms
420
525
A
BTW 66
BTW 67
tp=10 ms
400
500
I2t
I2t value
BTW 66
BTW 67
tp=10 ms
800
1250
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG= 100 mA
diG/dt = 1 A/
μ
s
100
A/
μ
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
230
°
C
RD 91
(Plastic)
.
HIGH SURGE CAPABILITY
.
HIGH ON-STATE CURRENT
.
HIGH STABILITYAND RELIABILITY
.
ISOLATEDPACKAGE:
INSULATED VOLTAGE= 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTW 66- / BTW 67-
Unit
200
400
600
800
1000
1200
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
200
400
600
800
1000
1200
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The BTW 66 and BTW 67 Family Silicon Controlled
Rectifiers are high performance glass passivated
chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
A
G
K
1/6
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