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參數(shù)資料
| 型號(hào)： | BTS737-S2 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？4.75 - 41V。 4x35mΩ極限（可控硅）第21A示波器- 28？ |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 248K |
| 代理商： | BTS737-S2 |
BTS 736 L2
Values
typ
Max
Parameter and Conditions,
each of the two channels
at T
j
= -40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Unit
min
Semiconductor Group
Page 5
1999-Jul-20
Protection Functions
Current limit,
(see timing diagrams, page 12)
T
j
=
-40°C:
T
j
=25°C:
T
j
=+150°C:
I
L(lim)
40
33
23
49
41
29
60
48
35
A
Repetitive short circuit current limit,
T
j
=
T
jt
each channel
two parallel channels
(see timing diagrams, page 12)
Initial short circuit shutdown time
I
L(SCr)
--
--
30
30
--
--
A
T
j,start
=25°C:
(see timing diagrams on page 12)
t
off(SC)
--
1.7
--
ms
Output clamp (inductive load switch off)
11)
at VON(CL) = Vbb - VOUT, IL= 40 mA
T
j
=-40°C:
T
j
=25°C...150°C:
V
ON(CL)
41
43
--
47
--
10
--
52
--
--
V
Thermal overload trip temperature
Thermal hysteresis
T
jt
T
jt
150
°C
K
--
Reverse Battery
Reverse battery voltage
12
)
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
4.0
A,
T
j
=
+150°C
-
V
bb
-
V
ON
--
--
--
32
--
V
600
mV
11
)If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
12
)Requires a 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 8).
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