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參數(shù)資料
| 型號： | BTS711L1Q67060-S7000-A2 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶體管貼片MOSFET的普羅費LESITUNGS |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 193K |
| 代理商： | BTS711L1Q67060-S7000-A2 |
BTS 711 L1
Semiconductor Group
9
Open-load detection,
OUT1...4
ON-state diagnostic condition:
V
ON
< R
ON
·
I
L(OL)
; IN high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
V
ON
OFF-state diagnostic condition:
V
OUT
> 3 V typ.; IN low
Open load
detection
Logic
unit
VOUT
Signal GND
REXT
RO
OFF
GND disconnect
(channel 1/2 or 3/4)
PROFET
V
IN2
ST
OUT2
GND
bb
Vbb
Ibb
IN1
OUT1
VIN1VIN2VST
VGND
Any kind of load. In case of IN
=
high is V
OUT
≈
V
IN
-
V
IN(T+)
.
Due to V
GND
>
0, no V
ST
= low signal available.
GND disconnect with GND pull up
(channel 1/2 or 3/4)
PROFET
V
IN2
ST
OUT2
GND
bb
Vbb
IN1
OUT1
VIN1
VIN2
VST
VGND
Any kind of load. If V
GND
> V
IN
- V
IN(T+)
device stays off
Due to V
GND
>
0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
PROFET
V
IN2
ST
OUT2
GND
bb
Vbb
IN1
OUT1
high
For an inductive load current up to the limit defined by EAS
(max. ratings see page 3 and diagram on page 10) each
switch is protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
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