參數(shù)資料
型號(hào): BTS650PE3180
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 單外設(shè)驅(qū)動(dòng)
文件頁(yè)數(shù): 4/16頁(yè)
文件大小: 236K
代理商: BTS650PE3180
Data Sheet BTS650P
Infineon Technologies AG
Page 4
2000-Mar-24
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
12
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Inverse Load Current Operation
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bIN
=
12 V,
I
L
=
-
20
A
see diagram on page 10
Nominal inverse load current
(Pins 1,2,6,7 to Tab)
V
ON
=
-0.5
V,
T
c =
85
°C
11
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
20
A,
I
IN
= 0,
T
j
=
+150°C
T
j
=
25
°C:
T
j
=
150
°C:
R
ON(inv)
--
4.4
7.9
70
6.0
10.5
m
I
L(inv)
55
--
A
-
V
ON
--
0.6
--
V
Operating Parameters
Operating voltage (
V
IN
=
0)
9, 13
)
Undervoltage shutdown
14
)
Undervoltage start of charge pump
see diagram page
15
Overvoltage protection
15
)
I
bb
=
15
mA
Standby current
I
IN
=
0
V
bb(on)
V
bIN(u)
5.0
1.5
--
34
4.5
V
V
3.0
V
bIN(ucp)
V
bIN(Z)
3.0
60
62
4.5
6.0
V
V
T
j
=-40°C:
T
j
=
25...+150°C:
T
j
=-40...+25°C:
T
j
=
150°C:
--
66
15
25
--
--
I
bb(off)
--
--
25
50
A
13
)If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to
V
bIN(u)
.
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14
)V
bIN
= V
bb
-
V
IN
see diagram on page 7. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5
V
(typ.) the charge pump is not active and
V
OUT
V
bb
-
3
V.
15
)
See also
V
ON(CL)
in circuit diagram on page 9.
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