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參數(shù)資料
| 型號： | BTS555PE3146 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設驅動 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 200K |
| 代理商： | BTS555PE3146 |
Data Sheet BTS550P
Values
min
typ
Parameter and Conditions
at
T
j
=
-40 ... +150
°
C,
V
bb
=
12
V unless otherwise specified
Symbol
Unit
max
Infineon Technologies AG
Page 5
2000-Mar-24
Protection Functions
Short circuit current limit
(Tab to pins 1,5)
15
V
ON
=
12
V, time until shutdown max. 350
μ
s
T
c
=-40
°
C:
T
c
=25
°
C:
T
c
=+150
°
C:
I
L(SCp)
100
110
120
190
220
210
350
330
310
A
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30
μ
s
Output clamp
16
)
(inductive load switch off)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Thermal overload trip temperature
Thermal hysteresis
t
d(SC)
80
--
350
μ
s
I
L
= 40 mA:
-
V
OUT(CL)
14
17
20
V
V
ON(CL)
40
44
47
V
V
ON(SC)
T
jt
T
jt
--
6
--
--
--
--
V
150
°
C
K
--
10
Reverse Battery
Reverse battery voltage
17
)
On-state resistance
(Pins 1,5 to pin 3)
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
T
j
=
150
°
C:
Integrated resistor in V
bb
line T
j
=25
°
C:
T
j
=150
°
C:
-
V
bb
R
ON(rev)
--
--
--
32
4.3
7.5
V
T
j
=
25
°
C:
3.4
--
m
R
bb
90
105
110
125
135
150
15
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
16
)This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
17
)The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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