參數(shù)資料
型號(hào): BTB24-800CWRG
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: 25A條雙向可控硅
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 157K
代理商: BTB24-800CWRG
BTA/BTB24, BTA25, BTA26 and T25 Series
2/9
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
I
SNUBBERLESS (3 Quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
I
STANDARD (4 Quadrants): BTB24...B, BTA25...B, BTA26...B
Symbol
Test Conditions
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Quadrant
T25
BTA/BTB
Unit
T2535
CW
BW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= 12 V R
L
= 33
I - II - III
MAX.
35
35
50
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
I - II - III
MIN.
0.2
V
MAX.
50
50
75
mA
I - III
II
MAX.
70
80
70
80
80
100
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 125°C
(dI/dt)c (2) Without snubber Tj = 125°C
MIN.
500
500
1000
V/μs
MIN.
13
13
22
A/ms
Quadrant
Value
Unit
I
GT
(1)
V
D
= 12 V R
L
= 33
I - II - III
IV
MAX.
50
100
mA
V
GT
V
GD
I
H
(2)
I
L
ALL
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
ALL
MIN.
0.2
V
MAX.
80
mA
I - III - IV
II
MAX.
70
160
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 13.3 A/ms Tj = 125°C
MIN.
MIN.
500
10
V/μs
V/μs
Symbol
Test Conditions
Value
Unit
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 35 A tp = 380 μs
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
V
DRM
= V
RRM
Tj = 125°C
Tj = 25°C
MAX.
16
5
m
μA
MAX.
Tj = 125°C
3
mA
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