參數(shù)資料
型號: BTB16-700SWRG
廠商: 意法半導體
英文描述: 16A TRIACS
中文描述: 16A條雙向可控硅
文件頁數(shù): 2/7頁
文件大?。?/td> 101K
代理商: BTB16-700SWRG
BTA/BTB16 and T16 Series
2/7
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
I
SNUBBERLESS and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
I
STANDARD (4 Quadrants)
Symbol
STATIC CHARACTERISTICS
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Quadrant
T16
BTA/BTB16
Unit
T1635
SW
CW
BW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= 12 V R
L
= 33
I - II - III
MAX.
35
10
35
50
mA
I - II - III
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
I - II - III
MIN.
0.2
V
MAX.
35
15
35
50
mA
I - III
II
MAX.
50
60
25
30
50
60
70
80
mA
dV/dt (2)
V
D
= 67 % V
DRM
gate open Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/μs Tj = 125°C
(dV/dt)c = 10 V/μs Tj = 125°C
Without snubber Tj = 125°C
MIN.
500
40
500
1000
V/μs
MIN.
-
-
8.5
3.0
-
-
-
-
-
A/ms
8.5
8.5
14
Test Conditions
Quadrant
BTA/BTB16
Unit
C
25
50
B
50
100
I
GT
(1)
V
D
= 12 V R
L
= 33
I - II - III
IV
MAX.
mA
V
GT
V
GD
I
H
(2)
I
L
ALL
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
ALL
MIN.
0.2
V
MAX.
25
50
mA
I - III - IV
II
MAX.
40
80
60
120
mA
dV/dt (2)
(dV/dt)c(2) (dI/dt)c = 7 A/ms Tj = 125°C
V
D
= 67 % V
DRM
gate open Tj = 125°C
MIN.
MIN.
200
5
400
10
V/μs
V/μs
Symbol
Test Conditions
Value
Unit
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 22.5 A tp = 380 μs
Threshold voltage
Tj = 25°C
MAX.
1.55
V
Tj = 125°C
MAX.
0.85
V
Dynamic resistance
Tj = 125°C
MAX.
25
m
μA
V
DRM
= V
RRM
Tj = 25°C
MAX.
5
Tj = 125°C
2
mA
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BTB16-800BRG 功能描述:雙向可控硅 16 Amp 800 Volt RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB