參數(shù)資料
型號: BTB16-600SWRG
廠商: 意法半導(dǎo)體
元件分類: 三端雙向可控硅開關(guān)
英文描述: 16A TRIACS
中文描述: 16A條雙向可控硅
文件頁數(shù): 5/7頁
文件大?。?/td> 101K
代理商: BTB16-600SWRG
BTA/BTB16 and T16 Series
5/7
Fig. 4:
On-state characteristics (maximum
values)
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I2t.
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
VTM (V)
ITM (A)
Tj=25°C
Tj max
Tj max:
Vto = 0.85V
Rd = 25 m
1
10
100
1000
0
20
40
60
80
100
120
140
160
180
Number of cycles
ITSM (A)
Non repetitive
Tj initial=25°C
Repetitive
Tc=85°C
One cycle
t=20ms
0.01
0.10
1.00
10.00
100
1000
3000
tp (ms)
ITSM (A), I2t (A2s)
Tj initial=25°C
ITSM
I2t
dI/dt limitation:
50A/μs
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(°C)
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
IGT
IH & IL
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dV/dt)c (V/μs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW/T1635
C
B
SW
0
25
50
75
100
125
0
1
2
3
4
5
6
Tj (°C)
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
相關(guān)PDF資料
PDF描述
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