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參數資料
| 型號： | BTA316B-800B |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3Q Hi-Com Triac |
| 封裝： | BTA316B-800B<SOT404 (SOT404)|<<http://www.nxp.com/packages/SOT404.html<1<,; |
| 文件頁數： | 2/13頁 |
| 文件大?。?/td> | 86K |
| 代理商： | BTA316B-800B |
BTA316B_SER_B_C_E_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2007
2 of 13
NXP Semiconductors
BTA316B series B, C and E
16 A Three-quadrant triacs high commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/
μ
s.
Table 2.
Type number
Ordering information
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3-leads (one lead
cropped)
Version
SOT404
BTA316B-600B
BTA316B-600C
BTA316B-600E
BTA316B-800B
BTA316B-800C
BTA316B-800E
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DRM
repetitive peak off-state voltage
Limiting values
Conditions
BTA316B-600B; BTA316B-600C;
BTA316B-600E
BTA316B-800B; BTA316B-800C;
BTA316B-800E
full sine wave; T
mb
≤
101
°
C; see
Figure 4
and
5
full sine wave; T
j
= 25
°
C prior to
surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/
μ
s
Min
Max
600
Unit
V
[1]
-
-
800
V
I
T(RMS)
RMS on-state current
-
16
A
I
TSM
non-repetitive peak on-state current
-
-
-
-
140
150
98
100
A
A
A
2
s
A/
μ
s
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
-
-
-
40
-
2
5
0.5
+150
125
A
W
W
°
C
°
C
over any 20 ms period
相關PDF資料 |
PDF描述 |
|---|---|
| BTA316B-800C | 3Q Hi-Com Triac |
| BTA316B-800E | 3Q Hi-Com Triac |
| BTA316X-600B | 3Q Hi-Com Triac |
| BTA316X-600C | 3Q Hi-Com Triac |
| BTA316X-600E | 3Q Hi-Com Triac |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BTA316B-800B,118 | 功能描述:雙向可控硅 Thyristor TRIAC 800V 150A 3-Pin (2+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA316B-800C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:16 A Three-quadrant triacs high commutation |
| BTA316B-800C,118 | 功能描述:雙向可控硅 Thyristor TRIAC 800V 150A 3-Pin (2+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA316B-800E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:16 A Three-quadrant triacs high commutation |
| BTA316B-800E,118 | 功能描述:雙向可控硅 Thyristor TRIAC 800V 150A 3-Pin (2+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
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