參數(shù)資料
型號： BTA312B-800C
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： 3Q Hi-Com Triac
封裝： BTA312B-800C<SOT404 (SOT404)|<<http://www.nxp.com/packages/SOT404.html<1<,;
文件頁數(shù)： 7/14頁
文件大?。?/td> 265K
代理商： BTA312B-800C
BTA312B-800C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 30 November 2010
7 of 14
NXP Semiconductors
BTA312B-800C
3Q Hi-Com Triac
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 15 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
see
Figure 11
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
see
Figure 11
V
D
= 800 V; T
j
= 125 °C
2
-
35
mA
2
-
35
mA
2
-
35
mA
I
L
latching current
-
-
50
mA
-
-
60
mA
-
-
50
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
-
1.3
0.8
35
1.6
1.5
mA
V
V
0.25
0.4
-
V
I
D
Dynamic characteristics
dV
D
/dt
off-state current
-
0.1
0.5
mA
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 125 °C; exponential
waveform; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 12 A;
dV
com
/dt = 20 V/μs; gate open circuit;
"without snubber" condition
I
TM
= 20 A; V
D
= 800 V; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
500
-
-
V/μs
dI
com
/dt
20
-
-
A/ms
t
gt
gate-controlled turn-on
time
-
2
-
μs
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參數(shù)描述
BTA312B-800C,118 功能描述:雙向可控硅 Thyristor TRIAC 800V 105A 3-Pin (2+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BTA312B-800C_10 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:3Q Hi-Com Triac
BTA312B-800E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:12 A Three-quadrant triacs high commutation
BTA312B-800E,118 功能描述:雙向可控硅 Thyristor TRIAC 800V 105A 3-Pin (2+Tab) RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
BTA312B-800ET 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:12 A Three-quadrant triacs high commutation high temperature
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