參數(shù)資料
型號: BTA225-800B
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: 3Q Hi-Com Triac
封裝: BTA225-800B<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù): 4/8頁
文件大?。?/td> 113K
代理商: BTA225-800B
September 1997
4
Rev1.200
NXP
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA225 series B
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
mb
91C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
20
25
30
0
10
20
30
40
= 180
120
90
60
30
BTA140
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
115
105
95
85
1
-50
0
50
Tmb / C
100
150
0
5
10
15
20
25
30
BTA140
91 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
BTA225
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
10
20
30
40
50
BTA140
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
50
100
150
200
BTA140
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
相關(guān)PDF資料
PDF描述
BTA225B-600B 3Q Hi-Com Triac
BTA225B-800B 3Q Hi-Com Triac
BTA312-600B 3Q Hi-Com Triac
BTA312-600CT 3Q Hi-Com Triac
BTA312-600C 3Q Hi-Com Triac
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